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3LN03M rev.0 i page 1 of 4 i www.onsemi.com features low on-resistance. high-speed switching. 2.5v drive. high esd voltage (typ 300v) [built-in one side diode for protection between gate-to-source]. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 30 v gate-to-source voltage (*1) v gss 10 v drain current (dc) i d 0.35 a drain current (pulse) i dp pw 10 s, duty cycle 1% 1.4 a allowable power dissipation p d 0.15 a channel temperature tch 150 a storage temperature tstg - -55 to +150 w ( * 1) : note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source. electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0 1 a gate-to-source leakage current i gss v gs =8v, v ds =0 1 a cutoff voltage v gs (off) v ds =10v, i d =100 a 0.4 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =180ma 0.36 0.6 s r ds (on)1 i d =180ma, v gs =4v 0.7 0.9 ? static drain-to-source on-state resistance r ds (on)2 i d =90ma, v gs =2.5v 0.8 1.15 ? r ds (on)3 i d =10ma, v gs =1.5v 1.6 2.4 ? input capacitance ciss v ds =10v, f=1mhz 30 pf output capacitance coss v ds =10v, f=1mhz 7 pf reverse transfer capacitance crss v ds =10v, f=1mhz 3.5 pf marking : yg continued on next page. ordering number : enn8153 3LN03M n-channel silicon mosfet general-purpose switching device applications ? 2011, scillc. all rights reserved. jan-2011, rev. 0 www.onsemi.com publication order number: 3LN03M/d
3LN03M rev.0 i page 2 of 4 i www.onsemi.com continued from preceding page. ratings parameter symbol conditions min typ max unit t urn-on delay time t d (on) see specified test circuit. 8 ns rise time t r see specified test circuit. 4.5 ns t urn-off delay time t d (off) see specified test circuit. 11 ns fall time t f see specified test circuit. 6 ns t otal gate charge qg v ds =10v, v gs =4v, i d =350ma 1 nc gate-to-source charge qgs v ds =10v, v gs =4v, i d =350ma 0.4 nc gate-to-drain ?iller?charge qgd v ds =10v, v gs =4v, i d =350ma 0.2 nc diode forward voltage v sd i s =350ma, v gs =0 0.88 1.2 v package dimensions switching time test circuit unit : mm 2158a 1 : gate 2 : source 3 : drain sanyo : mcp 0.65 0.65 2.0 0.9 0.6 0.3 12 3 2.1 1.25 0.425 0.425 0.2 0.3 0.15 0 to 0.1 pw=10 s d.c. 1% p. g 50 ? g s d i d =180ma r l =83 ? v dd =15v v out 3LN03M v in 4v 0v v in gate-to-source voltage, v gs -- v r ds (on) -- v gs it07512 ambient temperature, ta -- c r ds (on) -- ta it08161 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a it07510 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a it07511 0.1 1.0 0 1.0 0 0.5 0 0.2 0 00.20.30 .4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.1 0.2 0.3 0.4 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 t a= - -25 c - -25 c 25 c 25 c ta= 75 c 75 c v ds =10v 2.0 3.0 4.0 5.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 t a=25 c i d =90ma 180ma -- 4 0 -- 6 0 -- 2 0 0 2 0 4 06080 100 120 140 0.2 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 static drain-to-source on-state resistance, r ds (on) -- ? static drain-to-source on-state resistance, r ds (on) -- ? 6.0v 4.0v 3.5v 3.0v 2.5v 2.0v v gs =1.5v i d =90ma, v gs =2.5v i d =180ma, v gs =4.0v
3LN03M rev.0 i page 3 of 4 i www.onsemi.com 0 0 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t otal gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v it07518 it07520 r ds (on) -- i d drain current, i d -- a 3 5 7 1.0 2 3 23 57 23 57 0.01 0.1 1.0 it07519 030 10 15 20 25 5 drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf it07517 2 0.1 23 1.0 5 7 2 10 3 5 7 3 0 60 50 20 30 10 40 drain current, i d -- a sw time -- i d switching time, sw time -- ns it07516 it07515 diode forward voltage, v sd -- v i f -- v sd drain current, i d -- a it07514 0.01 0.1 0.1 23 57 23 57 1.0 7 5 3 3 2 2 7 5 1.0 forward transfer admittance, ? y fs ? -- s ? y fs ? -- i d 0.8 1.0 0.6 1.2 1.4 0.4 0.2 0.01 1.0 0.1 7 5 3 2 7 5 3 3 2 2 forward current, i f -- a v ds =10v 25 c t a= - -25 c 75 c v gs =0 - -25 c 25 c v dd =15v v gs =4v t d (off) t f t d (on) t r crss coss ciss f=1mhz v ds =10v i d =0.35a ta= 75 c 25 c -- 25 c v gs =4v r ds (on) -- i d drain current, i d -- a 3 5 7 1.0 2 3 23 57 23 57 0.01 0.1 1.0 static drain-to-source on-state resistance, r ds (on) -- ? static drain-to-source on-state resistance, r ds (on) -- ? ta= 75 c ta= 75 c -- 25 c 25 c v gs =2.5v it07521 r ds (on) -- i d drain current, i d -- a 5 7 2 3 1.0 5 7 23 57 23 0.01 0.1 static drain-to-source on-state resistance, r ds (on) -- ? v gs =1.5v ta= 75 c -- 25 c 25 c
3LN03M rev.0 i page 4 of 4 i www.onsemi.com 0 0 20 40 60 80 100 120 0.05 0.10 0.15 0.20 140 160 ambient temperature, ta -- c p d -- ta it07522 allowable power dissipation, p d -- w 3LN03M/d

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